Rare Earth Ceria Polishing Slurry Electronic/EL Grade
- Название продукта: Rare Earth Ceria Polishing Slurry Electronic/EL Grade
- Сайт Factroy: Округ Юду, Ганьчжоу, Цзянси, Китай
- Запрос цены: admin@ascent-chem.com
- Производитель: Ascent Petrochem Holdings Co., Limited
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- Rare Earth Ceria Polishing Slurry Electronic/EL Grade is typically used in formulations when particle size distribution, solids content, and pH and operating temperature, shear rate, and trace metal contamination must be controlled within specific ranges.
| Код ТН ВЭД | 645764 |
Как аккредитованная фабрика Ceria Polishing Slurry Electronic /EL Grade, мы соблюдаем строгие протоколы качества - каждая партия подвергается строгим испытаниям для обеспечения последовательных стандартов эффективности и безопасности.
| Упаковка | Available in 1 kg airtight HDPE bottle with tamper-evident cap, ensuring purity and stability for electronic-grade ceria polishing slurry. |
| Погрузка контейнера (20-футовый контейнер) | 20′ FCL: Rare Earth Ceria Polishing Slurry Electronic/EL Grade loaded in sealed drums/IBCs, palletized, secured, and protected from contamination. |
| Доставка | Rare Earth Ceria Polishing Slurry (Electronic/EL Grade) ships as a non-regulated aqueous suspension in sealed HDPE drums or IBCs. Protect from freezing, contamination, and extreme heat. Secure loads upright with proper palletization. Label as electronic-grade ceria slurry. Include SDS, COA, and lot traceability. No hazmat placarding required under normal transport conditions. |
| Хранение | Store in tightly sealed original containers in a clean, cool, dry area away from direct sunlight and extreme temperatures. Do not allow slurry to freeze; maintain temperature between 5–30°C. Keep containers closed when not in use to prevent contamination or evaporation. Stir or re-disperse thoroughly before use, and follow manufacturer’s shelf-life guidelines. |
| Срок годности | Shelf life: 12 months from manufacture date when stored sealed at 5–30°C, protected from freezing, contamination, and direct sunlight. |
For interlayer dielectric planarization in front-end wafer fabrication, rare earth ceria polishing slurry of electronic/EL grade begins with lot qualification against SEMI C39-0917 trace metal limits and SEMI C2-0217 liquid-borne particle counts. The as-received slurry is blended with ultrapure water at volumetric ratios between 1:1 and 1:4, then adjusted to pH 10.5–11.0 using semiconductor-grade potassium hydroxide or tetramethylammonium hydroxide depending on fab metal contamination rules. The blended slurry is transferred through a low-shear bellows pump to a 300 mm rotary CMP tool equipped with a grooved polyurethane pad, typically a Rohm Haas IC1000 class material. A downforce of 2–4 psi is applied through a multi-zone carrier with edge air bladder control. Platen speed is held at 60–90 rpm, while head speed is offset by 3–5 rpm against the platen direction to reduce center-to-edge removal difference. Point-of-use slurry flow is set to 150–250 mL/min after depth filtration at 0.1 µm. Blanket oxide removal rate on TEOS-type interlayer dielectrics ranges from 1500 Å/min to 3500 Å/min, with within-wafer non-uniformity below 5% on 300 mm wafers. Post-CMP defect count at a 45 nm equivalent threshold remains below 0.2 defects/cm² after brush scrubbing with dilute citric acid at pH 4–6. The primary terminal product is an interlayer dielectric stack for 28 nm and 14 nm CMOS logic, DRAM, or 3D NAND memory. Cerium residue after cleaner contact is verified by ICP-MS following acidified droplet extraction; fabs may reject lots when residual cerium concentration in the dielectric exceeds a locally defined control limit tied to contact resistance stability.
When Shallow Trench Isolation Shifts from Silica to Ceria Slurry
Shallow trench isolation CMP uses electronic/EL grade ceria slurry at a moderate dilution of 1:1 to 1:2 with ultrapure water and a pH window of 5–7. An anionic carboxylate additive system is introduced at the point of use to suppress silicon nitride removal while allowing silicon dioxide hydrolysis. The process runs on a 300 mm rotary platform with a hard polyurethane pad and continuous diamond disk conditioning at 1.0–1.5 lbf sweep load. Downforce ranges from 3–5 psi; platen speed is maintained at 60–80 rpm. Slurry flow is limited to 100–200 mL/min because excessive flow reduces selectivity through temperature rise and pad-water film thickening. Oxide removal rate on high-density plasma silicon dioxide is 2500–4500 Å/min. Silicon nitride removal on the same pad remains below 50 Å/min, giving published production selectivity commonly exceeding 30:1 oxide-to-nitride. The terminal product is an STI module in embedded flash, DRAM, or logic, with nitride stop layer thickness loss below 5 nm. Lot-release compliance follows SEMI C39-0917 for alkali and alkaline earth metals, especially sodium below 0.5 ppm and potassium below 0.3 ppm. Particle counts are verified by SEMI C2-0217 with a detection threshold of 0.1 µm. Slurry pot life after dilution is limited to 12–24 h due to shear-induced agglomeration. Point-of-use filtration at 0.45 µm removes oversize particles but also reduces active ceria solids if filter loading is not monitored.
| Application | Feed CeO₂ solids (wt%) | pH range | Pad type | Platen / spindle speed (rpm) | Slurry flow (mL/min) | Typical removal rate (Å/min) |
|---|---|---|---|---|---|---|
| Interlayer dielectric | 1–3 | 10.5–11.0 | Grooved polyurethane IC1000 class | 60–90 | 150–250 | 1500–3500 on TEOS |
| Shallow trench isolation | 2–5 | 5–7 | Hard polyurethane with conditioner | 60–80 | 100–200 | 2500–4500 oxide; <50 nitride |
| Photomask blank | 1–2 | 9–11 | Suede polyurethane | 30–50 | 80–150 | 300–800 quartz |
| Display glass | 5–10 | 4–6 | Non-woven polyester/polyurethane | 40–70 | 200–400 | 2000–5000 |
| Hard disk substrate | 5–15 | 3–5 | Polyurethane double-side | 50–90 | 150–300 | 3000–6000 NiP |
| Through-silicon via oxide | 1–2 | 8–10 | Soft polyurethane | 50–70 | 100–200 | 800–1500 oxide |
| SOI / bonded oxide | 0.5–1.5 | 9–10 | Poromeric pad | 40–60 | 80–120 | 200–500 |
Photomask Substrate Flatness and Defect Density in Advanced Reticle Preparation
Photomask blank planarization operates at lower slurry feed concentration than front-end oxide CMP. Electronic/EL grade ceria is diluted 1:5 to 1:12 with ultrapure water and pH adjusted to 9–11 using electronic-grade amine additives. The slurry is delivered through low-pressure spray bars onto a single-side oscillating polisher with a polyurethane-impregnated suede pad. Platen speed is limited to 30–50 rpm and workpiece pressure to 20–40 g/cm². Quartz or low-expansion glass mask blanks are polished to total thickness variation below 2 µm over 152 mm substrates. Surface roughness, measured by atomic force microscopy over 10×10 µm² scan fields, is held below 3 Å RMS. Post-clean defect density above 0.05 defects/cm² at 100 nm equivalent threatens resist adhesion and must be rejected. Residual cerium is measured by ICP-MS after acidified droplet etching; published control limits vary among blank suppliers. The terminal product is a photomask blank for EUV or 193 nm reticle preparation. Slurry filtration at 0.05 µm is commonly used in this application because oversized particles generate coating defects that survive post-sputter cleaning. The process is incompatible with strongly acidic or highly alkaline post-clean chemistries that increase surface microroughness through quartz etching.
Can AMOLED Fabs Extend Pad Life with EL-Grade Ceria at Reduced Concentration?
Display glass planarization for AMOLED and LTPS backplanes is a high-volume open-platform operation where pad life and slurry recirculation dominate cost of consumables. EL-grade ceria slurry at as-supplied solids of 5–10 wt% is dispensed without dilution or with up to 10% ultrapure water addition depending on glass type. pH is maintained at 4–6 with nitric acid or proprietary acidic buffers. The process uses a double-side polisher with non-woven polyester pads and planetary kinematic carriers. Large sheets, such as Gen 6 1500×1850 mm or Gen 8.5 2200×2500 mm, are processed at platen speeds of 40–70 rpm and slurry flow of 200–400 mL/min per head. The slurry is recirculated through 0.45 µm bag filters and heat exchangers to hold temperature at 25±2°C. Oxide removal on alkali-free glass is 2000–5000 Å/min; surface roughness after post-clean typically falls below 2 nm Ra per ISO 4287:1997. Sodium and iron leachables must be controlled below 0.5 ppm due to thin-film transistor threshold voltage shifts. Lot acceptance follows SEMI C39-0917 and ISO 14644-1:2015 cleanroom certification for packaging. The terminal product is the flat thin-film transistor array substrate used in AMOLED display panels. Operational boundary: pad life decreases sharply when recirculated slurry solids exceed 12 wt% because ceria packs into non-woven pad asperities and reduces removal rate below line throughput targets.
Hard Disk Substrate Polishing: Nickel-Phosphorus Plating and Alkali Metal Rejection
Electroless nickel-phosphorus coated aluminum or glass blanks are polished with ceria slurry at pH 3–5 to produce magnetic recording substrates below 1 Å RMS roughness. The slurry is used at 5–15 wt% solids, often undiluted, and is delivered through a dual-wedge gap in a double-side planetary polisher. Platen speed is 50–90 rpm; slurry flow is 150–300 mL/min per machine side. Polishing rate on NiP ranges from 3000 Å/min to 6000 Å/min under 8–12 kPa applied pressure. Alkali and chloride levels are held to the lowest practical limits because residual sodium or chloride promotes pit corrosion at NiP grain boundaries. Post-polish brush scrubbing with dilute sulfuric acid removes ceria residues; residual aluminum after packaging is verified by SEMI C39-0917. The terminal product is the 95 mm or 65 mm disk substrate before sputter deposition of magnetic layers. Operational boundary: do not use alkaline cleanup after ceria polish on NiP; pH above 8 accelerates nickel oxide formation and increases glide avalanche microdefects. Incompatibility with chloride-containing rinse water above 1 ppm is established on production lines because pit formation occurs within hours on unpassivated substrates.
Through-Silicon Via Oxide CMP after Copper Bulk Removal
In 3D packaging flows, ceria slurry removes sacrificial oxide from TSV reveal wafers after copper bulk removal. The slurry is typically diluted 1:3 with ultrapure water and pH buffered to 8–10. Low downforce of 1–2 psi is preferred on soft polyurethane pads to limit copper dishing below 300 Å across a 4 µm copper pillar diameter. Platen speed is 50–70 rpm; flow is 100–200 mL/min. The slurry must not contain strong chelating agents that attack exposed copper; otherwise copper oxide and slurry residue are difficult to remove prior to subsequent barrier dielectric deposition. The oxide removal rate reported on 300 mm TSV wafers ranges from 800 Å/min to 1500 Å/min, but published data for this specific configuration is limited; lot-specific polishing trials on production wafers are required. Endpoint is established when total thickness variation across the via array is below 2% of via diameter. The terminal product is a redistribution layer or high-bandwidth memory interposer. Incompatibility with amine-based post-CMP cleaners is noted when copper surfaces must remain oxide-free for subsequent polymer passivation.
Silicon-On-Insulator Buried Oxide Planarization: Why Bonding Microvoids Track Surface Roughness Beyond 5 Å RMS
SOI buried oxide and direct-bonding oxide layers are polished with ceria slurry diluted 1:8 in ultrapure water. The slurry is dispensed at pH 9–10 and low solids to minimize scratch count. Pad selection shifts to a soft poromeric material, with platen speed 40–60 rpm and flow 80–120 mL/min. Polish pressure is kept below 1.5 psi. Under these conditions, oxide removal rate is 200–500 Å/min, but post-polish surface roughness measured by atomic force microscopy can reach 2–5 Å RMS over 1×1 µm² scan fields. This is needed for direct wafer bonding where microvoids form on surfaces with Ra above 5 Å. The final clean uses buffered dilute oxalic acid at pH 4–5 to remove residual ceria without roughening the bonded interface. MEMS release and cavity SOI devices also use this process. The terminal product is a bonded SOI wafer or MEMS handle wafer. Operational boundary: slurry age beyond 48 h after dilution raises the count of dried ceria agglomerates near the wafer edge, requiring recirculation system purging before the next lot.
| Property | Test method | Typical control band |
|---|---|---|
| Trace metal impurities (Na, K, Fe, Al) | SEMI C39-0917 (ICP-MS) | Na <0.5 ppm, K <0.3 ppm, Fe <0.5 ppm, Al <0.5 ppm |
| Liquid-borne particle count | SEMI C2-0217 | <100 particles/mL at ≥0.1 µm |
| Particle size distribution D50 | ISO 13320-1:2020 | 80–180 nm for EL grade; some photomask grades 50–100 nm |
| Grain size after calcination | ASTM E112-13 | 5–20 nm primary crystallite size, vendor dependent |
| Cleanroom packaging | ISO 14644-1:2015 | Class 5 or better for final fill |
| Surface roughness after blanket oxide CMP | ISO 4287:1997 | <5 Å RMS on 1×1 µm² AFM scan |
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Rare Earth Ceria Polishing Slurry Electronic/EL Grade is an acidic aqueous dispersion of cerium oxide nanoparticles formulated for chemical mechanical planarization of oxide dielectrics and compound semiconductor substrates. The Electronic/EL designation separates the material from optical or general-purpose ceria polishes by lower total metal contamination, tighter median particle size control, and reduced coarse-particle concentration. Model designations in supplier datasheets typically encode the CeO₂ solids loading and the D50 target; for example, EL-CeO₂-20/130 represents a 20 wt% dispersion with a median particle size of 130 nm. The product is applied to shallow trench isolation planarization, interlayer dielectric CMP, pre-metal dielectric oxide planarization, silicon carbide wafer polishing, and gallium nitride substrate finishing. In these process windows, the slurry’s particle size distribution, zeta potential, and additive package determine oxide removal rate, selectivity to silicon nitride, and post-CMP defectivity.
What Distinguishes Electronic/EL Grade Ceria Slurry from Standard Optical-Grade Ceria Dispersions?
The critical difference is allowable contamination. Electronic/EL grade ceria slurry is processed from rare earth carbonate or oxalate feedstocks that are refined to reduce alkali and transition-metal residues. Certificates of analysis for this grade generally report sodium and potassium below 1 ppm and iron, nickel, copper, and chromium below 5 ppm when measured by inductively coupled plasma mass spectrometry after acid digestion. Optical-grade ceria powders used for glass polishing may contain total metallic impurities above 50 ppm, and their particle size distributions can include a coarse tail above 1 µm. The Electronic/EL grade is also passed through a controlled filtration train; typical large-particle counts above 0.5 µm are kept below 5000 particles/mL when measured with a liquid-borne particle counter calibrated according to ISO 21501-2:2019. This coarse-particle control is necessary because a single 1 µm ceria aggregate can produce a microscratch on a 200 mm oxide wafer under 3.0 psi downforce.
Controlling Specification Ranges with Analytical Release Methods
| Parameter | Target Range | Analytical Method |
|---|---|---|
| CeO₂ solids loading | 10–30 wt% | Gravimetric drying or inductively coupled plasma optical emission spectrometry |
| Median particle size D50 | 120–180 nm | ISO 13320:2020 laser diffraction or ASTM E2490-08 photon correlation spectroscopy |
| D90 | < 300 nm | ISO 13320:2020 |
| pH | 4.0–5.5 | ASTM E70-19 |
| Viscosity at 25 °C | 1.5–5.0 mPa·s | ASTM D2196-20 small-sample adapter |
| Zeta potential at pH 4.5 | +30 to +50 mV | Electrophoretic light scattering, ISO 13099-1:2012 |
| Large-particle count > 0.5 µm | < 5000 particles/mL | ISO 21501-2:2019 sensor |
| Sodium, potassium | < 1 ppm each | Inductively coupled plasma mass spectrometry |
| Iron, nickel, copper, chromium | < 5 ppm each | Inductively coupled plasma mass spectrometry |
| Specific gravity | 1.10–1.25 | Density meter or pycnometer |
| Storage temperature | 5–25 °C | Stability validation |
| Shelf life unopened | 12 months | D50, pH, and large-particle count retention |
Specifications are verified against lot release certificates. In CMP process qualification, D50, D90, pH, and large-particle count are monitored after drum or tote recirculation because shear in diaphragm pumps can shift the coarse tail. A 30-minute recirculation loop through a 0.8 µm cartridge is commonly used before delivery to the polisher; this filter size removes agglomerates without stripping the primary ceria particle fraction.
In shallow trench isolation planarization, the slurry is dispensed onto a ribbed hard polyurethane pad at a flow rate of 100–200 mL/min. Process settings on a 50 cm platen include platen speed 60–120 rpm, carrier speed 50–110 rpm, and downforce 2.0–4.0 psi. Under these conditions, a high-selectivity ceria slurry removes tetraethyl orthosilicate at 150–250 nm/min while removing silicon nitride at 20–50 nm/min, yielding an oxide-to-nitride selectivity between 4:1 and 10:1. Endpoint detection is performed by motor current change or optical interferometry, and over-polish is limited to 15–30 s to avoid dishing in wide isolation structures. Continuous diamond conditioning with a 80–100 µm conditioning disk at 2–4 psi conditioning downforce is required; without conditioning, pad glazing appears within 10–15 wafers, oxide removal rate drops by approximately 40%, and scratch count increases.
Ceria Selectivity Is Controlled by Ce³⁺/Ce⁴⁺ Redox Chemistry
Unlike fumed silica abrasive, which removes silicon dioxide mainly by mechanical action and pH-dependent hydrolysis, ceria particles generate chemically active Ce³⁺ sites at the oxide surface. The Ce³⁺/Ce⁴⁺ redox couple forms a soft cerium-silicate surface complex on tetraethyl orthosilicate films, increasing the local material removal rate while silicon nitride remains less reactive because its surface does not form the same complex under acidic conditions. The selectivity window is fragile. When pH is increased from 4.5 to 7.0, the zeta potential shifts from positive to near-neutral or negative, electrostatic attraction to the oxide surface decreases, and oxide removal rate drops by 30–50% at constant downforce. Conversely, adding anionic dispersants below pH 3.0 can reverse the particle charge and cause sudden particle aggregation, increasing D90 above 1 µm within 60 min. Because of this pH sensitivity, Electronic/EL grade material is supplied as a pre-adjusted dispersion rather than as a dry powder requiring on-site formulation.
When Ceria Slurry Is Used for Silicon Carbide and Gallium Nitride Substrate Polishing
For 4H-SiC and 6H-SiC substrates, Electronic/EL grade ceria slurry is employed after diamond lapping to remove subsurface damage and to produce an epi-ready Si-face. On a single-sided polisher with a 30 cm copper or tin lap plate, a 3.0 psi downforce, platen speed of 40–80 rpm, and slurry flow of 40–90 mL/min, the material removal rate is typically 0.5–1.2 µm/h. Surface roughness values below 0.5 nm Ra are obtained after 60–120 min of polishing when measured by atomic force microscopy according to ISO 4287:1997. For gallium nitride, published data for ceria slurry removal rates in production-scale CMP is limited; the primary use is final surface smoothing after diamond lapping, where the lower scratch depth relative to alumina abrasive is the controlling specification. If pad temperature exceeds 55 °C, water evaporation increases viscosity and promotes pad glazing. Slurry pot life on the platen is typically 4–6 h before pH excursion beyond 5.5 requires replenishment.
On a production line, the slurry is withdrawn from a 200 L high-density polyethylene tote using a peristaltic or diaphragm pump. Centrifugal pumps can cause ceria aggregate formation due to high shear; if a centrifugal pump is used, a bypass filter with a 0.8 µm cartridge is installed. The recirculation loop is run at 5–10 L/min for 30 min before polisher supply. The D50 shift during this loop is less than 10 nm when the pump is operated below 1500 rpm. Batch-to-batch D50 variance is controlled to approximately ±10 nm in Electronic/EL grade material, whereas optical-grade ceria may vary by ±20 nm or more; the tighter control reduces lot-to-lot removal rate drift on TEOS to less than 10%.
Large-Particle Count Stability During Polisher Recirculation
The large-particle count is more sensitive to pump shear than to pH in the normal operating range. Diaphragm pumps operating above 2000 rpm can raise the count of particles larger than 0.5 µm from fewer than 5000 particles/mL to more than 20 000 particles/mL within 2 h. This shift is reversible only by sufficient filtration and low-shear mixing. In polisher supply systems, the return line should be submerged in the tote to avoid foam generation, and the tote should be kept under a nitrogen blanket when the slurry is held for more than 8 h. Foam can concentrate ceria at the air-liquid interface and produce dried agglomerates that shed into the bulk dispersion.
Post-CMP cleaning of ceria-processed oxide and compound semiconductor wafers is more demanding than post-silica cleaning. Ceria particles adhere strongly to oxide surfaces through electrostatic attraction; an acidic sequence using 1–3 wt% citric or oxalic acid at 25–40 °C, followed by megasonic energy at 40–80 kHz and ultrapure water rinsing, is used to lift the particles. Residual cerium on silicon oxide after cleaning is measured by total reflection X-ray fluorescence or inductively coupled plasma mass spectrometry; a value below 1×10¹⁰ atoms/cm² is required for gate oxide integrity. Alkali cleaning with ammonium hydroxide–peroxide can redeposit cerium hydroxide and should be avoided as the primary step. The slurry is also incompatible with anionic polymer flocculants at pH below 3.0, and freezing below 0 °C causes irreversible agglomeration.
For copper bulk CMP, ceria Electronic/EL grade is generally not recommended. Ceria does not provide the same passivation film control on copper as alumina or silica slurries formulated with benzotriazole and hydrogen peroxide. Published data for ceria slurry on copper damascene structures is limited in supplier process notes; the abrasive can generate high copper dissolution and galvanic corrosion risk when used without azole inhibitors. Therefore, the material is confined to oxide, nitride, and substrate planarization applications where its selectivity and scratch performance are specified.
